Infineon BSM15GD120DN2E3224: A 1200V, 15A IGBT Module for High-Efficiency Power Conversion

The relentless pursuit of higher efficiency, greater power density, and enhanced reliability in power electronics drives the continuous innovation in semiconductor technology. At the forefront of this evolution is the Insulated Gate Bipolar Transistor (IGBT) module, a workhorse for medium to high-power applications. The Infineon BSM15GD120DN2E3224 stands as a prime example, engineered to deliver superior performance in demanding power conversion systems.

This module integrates a robust 1200V IGBT platform with a 15A current rating, establishing an ideal solution for a broad spectrum of industrial applications. Its design is optimized for high-efficiency power conversion, making it a preferred choice in domains such as industrial motor drives, renewable energy systems (like solar and wind inverters), uninterruptible power supplies (UPS), and welding equipment.

A key to its performance lies in the advanced Trenchstop™ IGBT7 technology. This latest generation chip technology from Infineon significantly reduces both saturation voltage (Vce(sat)) and switching losses. The lower conduction losses mean reduced power dissipation during operation, leading to cooler running temperatures. Simultaneously, the minimized switching losses allow for higher operating frequencies, which in turn enables designers to use smaller passive components like inductors and capacitors, ultimately increasing the overall power density of the end system.

Beyond the IGBT itself, the module incorporates a co-packaged EmCon7 diode. This emitter-controlled diode is specifically designed to complement the IGBT7, offering excellent soft reverse recovery characteristics. This synergy is critical for minimizing voltage overshoots and electromagnetic interference (EMI), contributing to smoother and more reliable switching behavior, especially in hard-switching topologies.

The module’s construction ensures maximum usability and durability. It features a low-inducence design with an internal busbar structure, which is crucial for curbing parasitic inductance that can cause damaging voltage spikes. The electrically isolated baseplate (EcoPack™) simplifies thermal management and mechanical mounting by allowing direct attachment to a heatsink without the need for an additional insulating kit, thereby reducing both assembly time and cost.

ICGOODFIND: The Infineon BSM15GD120DN2E3224 is a high-performance IGBT module that masterfully balances low losses with high robustness. Its integration of cutting-edge IGBT7 and EmCon7 diode technology makes it an exceptional component for engineers aiming to develop next-generation power conversion systems that demand uncompromising efficiency and power density.

Keywords: IGBT Module, High-Efficiency, Trenchstop™ Technology, Power Conversion, 1200V.