Infineon IRF1404ZSTRLPBF: High-Performance Power MOSFET for Demanding Automotive and Industrial Applications
The relentless drive for higher efficiency, greater power density, and enhanced reliability in automotive and industrial systems places immense demands on semiconductor components. At the heart of many of these advanced power conversion and switching solutions lies the power MOSFET. The Infineon IRF1404ZSTRLPBF stands out as a premier example, engineered to deliver exceptional performance in the most challenging environments.
This device is a N-channel MOSFET built using Infineon's advanced strip-based HEXFET technology. This innovative manufacturing process is key to its outstanding capabilities, achieving an exceptionally low on-state resistance (RDS(on)) of just 3.6 mΩ at a 10V gate drive. This ultra-low resistance is a critical figure of merit, as it directly translates to minimized conduction losses. When switching high currents, lower RDS(on) means less energy is wasted as heat, leading to significantly higher overall system efficiency and reducing the need for extensive thermal management.
The IRF1404ZSTRLPBF is optimized for high-current applications, capable of handling a continuous drain current (ID) of 162A and impressive pulse currents. With a drain-to-source voltage (VDS) rating of 40V, it is perfectly suited for high-power DC-DC converters, motor control modules, and solenoid drivers. Its rugged design ensures exceptional avalanche robustness, a vital characteristic for dealing with voltage spikes and transients commonly encountered in automotive electrical systems and industrial motor drives.
A primary focus of its design is suitability for automotive applications. It complies with the stringent AEC-Q101 qualification standard, guaranteeing its performance and reliability under the harsh conditions of automotive operation, including wide temperature fluctuations and intense vibration. Furthermore, its low gate charge (QG) and fast switching speeds make it ideal for high-frequency switch-mode power supplies (SMPS), enabling designers to create smaller, lighter, and more efficient power electronics.
Packaged in a robust TO-LL (Through-Hole Lead Long) package, the IRF1404ZSTRLPBF offers superior thermal performance. The package provides a low thermal resistance path from the silicon die to the heatsink, allowing for effective heat dissipation and sustained operation under full load conditions.
ICGOOODFIND: The Infineon IRF1404ZSTRLPBF is a high-performance power MOSFET that sets a high standard for efficiency and durability. Its combination of ultra-low RDS(on), high current handling, avalanche ruggedness, and AEC-Q101 qualification makes it an exceptional choice for designers of cutting-edge automotive systems, industrial automation, and power supplies where reliability and performance cannot be compromised.
Keywords: Power MOSFET, Low RDS(on), Automotive AEC-Q101, High Current Switching, HEXFET Technology
