The shift to 800V power architecture in AI data centers is set to drive explosive growth for GaN, which may soon overtake SiC in adoption.

Infineon’s Adam White confirmed that AI server racks will climb from 500kW to megawatt levels. Power semiconductor content is expected to reach $150 per kilowatt, unlocking major market expansion.

From 2026, data center power design will move from integrated rack power to a Sidecar architecture using three-phase 800V DC distribution. This external cabinet houses multiple power modules, stepping up from 400V AC to 800V DC without replacing legacy transformers.

Infineon highlighted its strength across silicon, GaN, and SiC. GaN is gaining fast in high-frequency applications. The mid-to-low voltage modules required for 800V systems will directly boost GaN adoption. Infineon’s CoolGaN™ transistors offer high power density and compact size for these systems.

If 30GW of AI compute is added annually, the power semiconductor opportunity could reach $3.1 billion in AI alone. Infineon also launched new 800V-ready products, including GaN-based bus converters (800V to 12V), digital multi-phase PWM controllers, PoL regulators, TLVR modules, PSU/BBU solutions, eFuses, and hot-swap protection devices.

ICgoodFind:800V data center power is turning GaN into a mainstream player. Infineon’s full-spectrum portfolio is well positioned to lead this transition.