Infineon IPA50R190CE: A 500V 19mΩ Power MOSFET for High-Efficiency Switching Applications

The relentless pursuit of higher efficiency and power density in modern electronic systems, from server power supplies to industrial motor drives and renewable energy inverters, places immense demands on power switching devices. Addressing this need, the Infineon IPA50R190CE stands out as a high-performance Power MOSFET engineered to deliver exceptional efficiency and reliability in demanding applications.

At the core of this device's prowess is its remarkably low on-state resistance (RDS(on)) of just 19mΩ. This ultra-low resistance is a critical figure of merit, as it directly translates to reduced conduction losses. When the MOSFET is fully turned on, less electrical energy is wasted as heat across the drain-source channel. This allows for higher current handling capabilities and significantly improves the overall system efficiency, leading to cooler operation and potentially smaller heatsinks.

Rated for 500V drain-source voltage, the IPA50R190CE offers a robust safety margin for operations in off-line switch-mode power supplies (SMPS) following universal input voltage standards (85 – 265 VAC) and other high-voltage circuits. This high voltage rating ensures reliable operation against line transients and spikes, enhancing system durability.

Built on Infineon's advanced CoolMOS™ CE technology, this MOSFET is not just about low resistance. This technology platform is specifically optimized for ease of use and high switching performance. It achieves an excellent balance between low switching losses and minimal gate charge (Qg). Reduced switching losses are paramount for high-frequency operation, enabling designers to increase the switching frequency of their power supplies. This, in turn, allows for the use of smaller passive components like transformers and filter inductors, dramatically increasing power density.

The benefits of the IPA50R190CE extend beyond raw specifications. Its features contribute to:

Higher System Efficiency: Minimized conduction and switching losses lead to superior energy conversion from input to output.

Increased Power Density: Capability to operate at higher frequencies allows for more compact design.

Enhanced Thermal Performance: Reduced power dissipation lowers the operating temperature, improving long-term reliability.

Simplified Drive Requirements: The optimized technology offers good switching behavior without excessive driving complexity.

ICGOOODFIND

The Infineon IPA50R190CE is a superior component choice for engineers designing high-efficiency, high-power-density systems. Its combination of an ultra-low 19mΩ RDS(on), a 500V rating, and the optimized performance of CoolMOS™ CE technology makes it an exceptional Power MOSFET for demanding switching applications in computing, industrial, and automotive environments.

Keywords:

Power MOSFET

High-Efficiency

Low RDS(on)

CoolMOS™ CE

Switching Applications