Infineon BSC010N04LS: High-Efficiency N-Channel MOSFET for Advanced Power Management

In the rapidly evolving field of power electronics, efficiency, thermal performance, and reliability are paramount. The Infineon BSC010N04LS stands out as a high-performance N-channel MOSFET engineered to meet these demanding requirements. Utilizing Infineon’s advanced OptiMOS™ technology, this power semiconductor offers an exceptional blend of low on-state resistance and high switching performance, making it an ideal choice for a wide range of power management applications.

A key strength of the BSC010N04LS is its extremely low RDS(on) of just 1.0 mΩ (max). This minimal resistance directly translates to reduced conduction losses, allowing for higher efficiency and less heat generation during operation. Whether deployed in synchronous rectification, DC-DC converters, or motor control systems, this attribute ensures that more power is delivered to the load and less is wasted as heat. The result is a cooler, more efficient, and more compact end-product design.

Furthermore, the device is optimized for high-frequency switching. The low gate charge (Qg) and exceptional figure of merit (FOM) significantly reduce switching losses, which is critical for modern switch-mode power supplies (SMPS) that operate at ever-increasing frequencies to reduce the size of passive components like inductors and capacitors.

The BSC010N04LS is housed in a space-saving PG-TDSON-8 package, which offers an excellent power-to-size ratio. This compact footprint is essential for today's high-density power designs, from enterprise computing servers and telecom infrastructure to automotive systems and industrial drives. The package also features superior thermal characteristics, efficiently dissipating heat to maintain device reliability under heavy load conditions.

Designed with robustness in mind, this MOSFET offers a high level of ruggedness and avalanche durability, ensuring stable operation even in harsh electrical environments prone to voltage spikes and transients. Its qualification for automotive applications underscores its reliability and performance under the most stringent quality standards.

ICGOOODFIND: The Infineon BSC010N04LS is a superior N-channel MOSFET that sets a high bar for power management solutions. Its industry-leading low RDS(on), high switching speed, and robust thermal performance make it an indispensable component for designers striving to achieve peak efficiency and power density in advanced electronic systems.

Keywords:

OptiMOS™ Technology

Low RDS(on)

High-Frequency Switching

Power Density

Synchronous Rectification