Infineon IPW65R065C7 CoolMOS™ P7 Power Transistor: Datasheet, Application Notes, and Key Features

The relentless pursuit of higher efficiency, power density, and reliability in power electronics is driven by innovations in semiconductor technology. At the forefront of this evolution is Infineon's CoolMOS™ P7 series, with the IPW65R065C7 standing out as a prime example of advanced superjunction (SJ) MOSFET performance. This high-voltage power transistor is engineered to meet the demanding requirements of modern switched-mode power supplies (SMPS), industrial drives, and renewable energy systems.

Engineered on Infineon’s proprietary CoolMOS™ P7 technology, the IPW65R065C7 is a 650 V, 0.065 Ω champion that sets a new benchmark for efficiency. Its core innovation lies in the drastic reduction of switching and conduction losses. The superjunction structure enables an exceptionally low figure-of-merit (R DS(on) x Q G), which directly translates to cooler operation and higher system efficiency. This makes it an ideal choice for high-frequency operations where thermal management is a critical challenge.

A deep dive into the datasheet reveals its robust electrical characteristics. Key specs include a continuous drain current (I D) of 18.5 A and an impressive avalanche ruggedness, ensuring high reliability under extreme operating conditions. The device also features a very low gate charge (Q G) and reduced internal gate resistance, which simplifies gate driving requirements and minimizes driving losses.

For design engineers, comprehensive application notes provided by Infineon are invaluable. They offer critical guidance on:

PCB Layout Recommendations: Optimizing stray inductance for minimal voltage overshoot and stable switching behavior.

Gate Driving Considerations: Advice on selecting appropriate gate driver ICs and configuring gate resistor values to balance switching speed and EMI.

Thermal Management: Strategies for effective heatsinking to maximize power throughput and longevity.

Application Circuits: Reference designs for common topologies like PFC, LLC resonant, and flyback converters.

The key features that distinguish the IPW65R065C7 are:

Ultra-Low On-Resistance: R DS(on), max = 65 mΩ at V GS = 10 V, minimizing conduction losses.

Exceptional Switching Performance: Optimized for both hard- and soft-switching topologies, leading to higher frequency designs and smaller passive components.

Integrated Fast Body Diode: Provides excellent reverse recovery characteristics, enhancing reliability in bridge circuits.

High Robustness: Qualified for industrial applications, offering superior resilience against avalanche and overcurrent conditions.

ICGOODFIND Summary

The Infineon IPW65R065C7 CoolMOS™ P7 is a state-of-the-art power MOSFET that delivers a superior blend of high efficiency, power density, and reliability. Its optimized performance characteristics make it an outstanding component for designers aiming to push the boundaries in next-generation power supply and conversion systems, ultimately leading to smaller, cooler, and more energy-efficient end products.

Keywords

CoolMOS P7, High-Efficiency, Power Transistor, Superjunction MOSFET, 650V