Infineon IDW40E65D2: A 650V, 40A Si IGBT with Diode in TO-247 Plus Package
In the realm of power electronics, the demand for robust and efficient switching devices is ever-present. The Infineon IDW40E65D2 stands out as a prime example of engineering tailored for high-performance applications. This 650V, 40A silicon IGBT co-packaged with a freewheeling diode in a TO-247 Plus package is designed to meet the rigorous requirements of modern power conversion systems.
At the heart of this device is a state-of-the-art Trenchstop™ IGBT technology. This proprietary design from Infineon significantly reduces saturation voltage (VCE(sat)) and minimizes switching losses. The result is a remarkable improvement in overall efficiency, especially in operations requiring high switching frequencies. The lower losses directly translate into reduced heat generation, allowing for higher power density designs and potentially smaller heatsinks, which saves both space and cost.
A key feature of the IDW40E65D2 is its integrated anti-parallel diode. This co-packaging strategy simplifies circuit design and PCB layout by eliminating the need for a separate external diode in many applications. It ensures optimal reverse recovery characteristics, which is critical for mitigating losses and enhancing reliability in circuits like inverters and motor drives.
The device is housed in the robust TO-247 Plus package. This package is renowned for its superior thermal performance compared to the standard TO-247, thanks to its extended and thicker leads that lower thermal resistance from the die to the PCB. This enhanced thermal capability allows the IGBT to handle higher continuous and pulsed currents, making it exceptionally reliable in demanding environments such as industrial motor controls, uninterruptible power supplies (UPS), and solar inverters.
Engineers will appreciate the low VCE(sat) of typically 1.55V at nominal current, which is a direct contributor to lower conduction losses. Combined with a tight parameter distribution, this ensures consistent and predictable performance across production batches, which is vital for industrial manufacturing.
ICGOOODFIND: The Infineon IDW40E65D2 successfully merges high voltage capability, high current handling, and exceptional efficiency in a thermally superior package. Its integrated diode and low-loss characteristics make it an outstanding choice for designers aiming to boost performance and reliability in high-power switching applications.
Keywords: IGBT, Trenchstop™, High Efficiency, TO-247 Plus, Power Conversion
