Infineon IKW75N65EL5: High-Performance 650V TRENCHSTOP™ 5 IGBT for Robust Switching Applications
The demand for efficient and reliable power switching solutions continues to grow across industries such as industrial motor drives, renewable energy systems, and uninterruptible power supplies (UPS). Addressing this need, Infineon Technologies introduces the IKW75N65EL5, a 650V IGBT that sets a new benchmark for performance and ruggedness in power electronics. Leveraging Infineon’s advanced TRENCHSTOP™ 5 technology, this device is engineered to deliver superior efficiency, minimal switching losses, and enhanced thermal behavior in demanding applications.
One of the standout features of the IKW75N65EL5 is its optimized trade-off between switching losses and saturation voltage. Thanks to the trench gate field-stop structure, the IGBT achieves low VCE(sat) while maintaining exceptionally fast switching characteristics. This results in reduced conduction and switching losses, which directly translates into higher system efficiency and lower operating temperatures. For designers, this means the ability to operate at higher frequencies without compromising thermal performance or resorting to complex cooling mechanisms.
Furthermore, the device is designed with robustness in mind. It offers excellent short-circuit capability and a tight parameter distribution, ensuring consistent and reliable operation even under extreme conditions. The 650V breakdown voltage provides ample margin for handling voltage spikes in 400V grid applications, enhancing system longevity and safety. Additionally, the IGBT features a co-packed reverse recovery Emitter Controlled 5 diode, which further reduces electromagnetic interference (EMI) and improves overall system stability.
The module is also notable for its ease of use. The low-loss and soft-switching performance make it suitable for both hard- and soft-switching topologies, including resonant converters. Its TO-247 package ensures mechanical robustness and efficient thermal dissipation, simplifying integration into high-power designs.
In summary, the Infineon IKW75N65EL5 represents a significant advancement in IGBT technology, offering engineers a powerful and dependable solution for high-performance switching applications.
ICGOOODFIND: The Infineon IKW75N65EL5 stands out as a top-tier 650V IGBT, combining high efficiency, thermal robustness, and excellent switching performance—making it ideal for next-generation power systems.
Keywords:
TRENCHSTOP™ 5 Technology
Low Switching Losses
650V Breakdown Voltage
Short-Circuit Ruggedness
Emitter Controlled 5 Diode
